| 摘要 |
1294016 Luminescent PN diodes SONY CORP 17 April 1970 [18 April 1969] 18537/70 Heading H1K In the manufacture of a luminescent diode by liquid epitaxial growth on a GaP substrate oxygen is diffused into a melt containing GaP from a flow of carrier gas containing gallium monoxide vapour before the melt is brought into contact with the substrate. In the embodiment a tellurium doped substrate and a melt consisting of gallium, gallium phosphide and tellurium are disposed in one boat and gallium and gallium trioxide in a second in an openended quartz tube with separate heaters for the two boats. Nitrogen (or argon) is flowed over the second boat and picks up gallium monoxide in a concentration determined by the temperature and flow rate and carries it forward to the melt. When the melt contains enough oxide it is flowed over the substrate and cooled to deposit the epitaxial layer. During cooling zinc in vapour or powder form can be added to the melt or zinc diffused from vapour into the completed layer to form a PN junction within the oxygen-doped region.
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