发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING OVERDRIVE BITLINE SENSE AMPLIFIER THEREIN
摘要 After data readout, in equalizing a complementary pair of bit lines one of which has been overdriven with an overdrive voltage, excessive charges on the overdriven bit line are discharged by a discharge circuit. By adjusting the discharge period of the discharge circuit, the potential to which the bit lines are equalized is adjusted.
申请公布号 KR100567686(B1) 申请公布日期 2006.04.05
申请号 KR20030006693 申请日期 2003.02.04
申请人 发明人
分类号 G11C7/06 主分类号 G11C7/06
代理机构 代理人
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