| 摘要 |
A flip-chip LED device ( 10 ) includes a plurality of group III-nitride semiconductor layers ( 22 ) defining a p/n junction and including a top p-type group III-nitride layer ( 28 ), and a p-contact ( 30, 30', 30'' ) for flip-chip bonding the top p-type group III-nitride layer. The p-contact includes an aluminum layer ( 32 ) disposed on the top p-type group III-nitride layer ( 28 ), and an interface layer ( 40, 66, 72, 80 ) disposed between the aluminum layer and the top p-type group III-nitride layer. The interface layer reduces a contact resistance between the aluminum layer ( 32 ) and the top p-type group III-nitride layer ( 28 ). The interface layer comprises one or more group III-nitride layers.
|
