发明名称 |
Wet cleaning method to eliminate copper corrosion |
摘要 |
A method for cleaning semiconductor substrates includes a DI water clean operation that uses a spin speed no greater than 350 rpm. The cleaning method may include additional cleaning operations such as an organic clean, an aqueous chemical clean or a DI water/ozone clean. The cleaning method may be used to clean substrates after the conclusion of an etching procedure which exposes a single film between a Cu-containing conductive material and the environment. The spin speed of the DI water clean operation prevents copper corrosion due to breakdown of the film that separates the Cu-containing conductive material from the environment.
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申请公布号 |
US7022610(B2) |
申请公布日期 |
2006.04.04 |
申请号 |
US20030743979 |
申请日期 |
2003.12.22 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHOU CHUN-LI;LIN YIH-ANN;HUANG YI-CHEN;CHEN CHAO-CHENG;TAO HUN-JAN |
分类号 |
H01L21/302;H01L21/02;H01L21/306;H01L21/3213;H01L21/768 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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