发明名称 Hybrid magnetoresistive random access memory (MRAM) architecture
摘要 The present invention relates to a hybrid MRAM architecture, and more particularly to a hybrid MRAM architecture capable of being used with an MCU and an MPU. This hybrid MRAM architecture is adapted to a controlling device for accessing a bit of information, comprising a plurality of first MRAM arrays (1T1MTJ architecture), a plurality of second MRAM arrays (XPC architecture), an address line, an access decoder, a sensing and writing circuit, and at least one I/O bus. The access decoder accesses to the bit of information from either the first or the second MRAM arrays selected in accordance with an address signal from the controlling device. The sensing and writing circuit amplifies the bit of information and transmits it to the controlling device via the at least one I/O bus. Accordingly, the access of the bit of information is completed.
申请公布号 US7023726(B1) 申请公布日期 2006.04.04
申请号 US20050038107 申请日期 2005.01.21
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 CHEN KUO-LUNG;KAO MING-JER;TSAI MING-JIN
分类号 G11C11/00 主分类号 G11C11/00
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