发明名称 |
Method for forming rectangular-shaped spacers for semiconductor devices |
摘要 |
A semiconductor device and method of making the same forms a spacer by depositing a spacer layer over a substrate and a gate electrode and forms a protective layer on the spacer layer. The protective layer is dry etched to leave a thin film sidewall on the spacer layer. The spacer layer is then etched, with the protective layer protecting the outer sidewalls of the spacer layer. This etching creates spacers on the gate that have substantially vertical sidewalls that extend parallel to the gate electrode sidewalls. The I-shape of the spacers prevent punch-through during the source/drain ion implantation process, providing an improved source/drain implant dose profile.
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申请公布号 |
US7022596(B2) |
申请公布日期 |
2006.04.04 |
申请号 |
US20030747680 |
申请日期 |
2003.12.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ZHONG HUICAI;DAKSHINA-MURTHY SRIKANTESWARA |
分类号 |
H01L21/3205;H01L21/266;H01L21/336 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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