METHOD OF FORMING GATE OXIDES OF SEMICONDUCTOR DEVICE WITH DIFFERENT THICKNESS FROM EACH OTHER,申请号KR20040077939-传众专利搜索

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发明名称	METHOD OF FORMING GATE OXIDES OF SEMICONDUCTOR DEVICE WITH DIFFERENT THICKNESS FROM EACH OTHER
摘要
申请公布号	KR20060028992(A)	申请公布日期	2006.04.04
申请号	KR20040077939	申请日期	2004.09.30
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	PARK, SEONG GEON;KANG, SANG BOM;SHIN, YU GYUN
分类号	H01L21/8242;H01L21/31;H01L21/336;H01L27/108	主分类号	H01L21/8242
代理机构		代理人
主权项
地址

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