| 摘要 |
The present invention relates to a process for integrating air as dielectric in semiconductor devices, comprising the steps of: a. applying a layer of a dielectric ( 2 ) which is to be patterned to a substrate ( 1 ); b. patterning the dielectric layer ( 2 ) which has been applied; c. applying a conductor metal ( 3 ) for the patterned dielectric layer ( 2 ) and forming a common surface from the conductor metal ( 3 ) and the dielectric ( 2 ); d. applying a layer of an organic dielectric ( 4 ) to the layer produced in step c.; and e. bringing the coated substrate produced in this way into contact with a fluorine-containing compound in order to form an arrangement which has air as dielectric between conductor structures and has a continuous dielectric layer ( 4 ) on the top side, and to a semiconductor device with air layers as dielectric produced using this process.
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