| 摘要 |
A pixel sensor cell used in a CMOS image sensor is disclosed. The cell includes a pinned photodiode formed in a Pwell that is formed in an N-type semiconductor substrate. A transfer transistor is placed between the pinned photodiode and an output node. A reset transistor is coupled between a high voltage rail V<SUB>dd </SUB>and the output node. Finally, an output transistor with its gate coupled to the output node is provided.
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