| 发明名称 |
Method of fabrication of MIMCAP and resistor at same level |
| 摘要 |
A method is disclosed of fabricating a MIMCAP (a capacitor (CAP) formed by successive layers of metal, insulator, metal (MIM)) and a thin film resistor at the same level. A method is also disclosed of fabricating a MIMCAP and a thin film resistor at the same level, and a novel integration scheme for BEOL (back-end-of-line processing) thin film resistors which positions them closer to FEOL (front-end-of-line processing) devices.
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| 申请公布号 |
US7022246(B2) |
申请公布日期 |
2006.04.04 |
| 申请号 |
US20030336992 |
申请日期 |
2003.01.06 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHINTHAKINDI ANIL K.;JENG SHWU-JEN;LOFARO MICHAEL F.;SCHNABEL CHRISTOPHER M.;STEIN KENNETH J. |
| 分类号 |
H01L21/302;H01L21/768;H01L21/02;H01L21/3205;H01L21/822;H01L23/52;H01L23/522;H01L27/04;H01L27/08 |
主分类号 |
H01L21/302 |
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