发明名称 High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same
摘要 A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.
申请公布号 US7022544(B2) 申请公布日期 2006.04.04
申请号 US20020321660 申请日期 2002.12.18
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 COHEN GUY MOSHE;OUYANG QIQING C.;SCHAUB JEREMY DANIEL
分类号 H01L21/00;H01L27/146;H01L31/0328;H01L31/08;H01L31/10;H01L31/103;H01L31/18;H04N5/335 主分类号 H01L21/00
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