发明名称 Display device with active-matrix transistor having silicon film modified by selective laser irradiation
摘要 An active matrix display device is provided which includes an active matrix substrate having a modified region which is formed by applying laser beams selectively to a silicon film formed on an insulating board. Active circuits, which include pixel circuits, are formed in the modified region. The pitch of the pixel circuits formed in a display region of the active matrix substrate, which display region is in the modified region, is set to be substantially equal to a pitch of peripheral circuits formed in the modified region in a peripheral region of the active matrix substrate. In addition, the pitch of the pixel circuits can be set to be substantially twice the pitch of the pixels themselves.
申请公布号 US7023500(B2) 申请公布日期 2006.04.04
申请号 US20030345261 申请日期 2003.01.16
申请人 HITACHI, LTD. 发明人 KIKUCHI HIROSHI;HONGO MIKIO;HATANO MUTSUKO;OHKURA MAKOTO
分类号 G02F1/136;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L27/12 主分类号 G02F1/136
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