| 摘要 |
The present invention provides, in one embodiment, a P-type Metal Oxide Semiconductor (PMOS) device ( 100 ). The device ( 100 ) comprises a tensile-strained silicon layer ( 105 ) located on a silicon-germanium substrate ( 110 ) and silicon-germanium source/drain structures ( 135, 140 ) located on or in the tensile-strained silicon layer ( 105 ). The PMOS device ( 100 ) further includes a channel region ( 130 ) located between the silicon-germanium source/drain structures ( 135, 140 ) and within the tensile-strained silicon layer ( 105 ). The channel region ( 130 ) has a compressive stress ( 145 ) in a direction parallel to an intended current flow ( 125 ) through the channel region ( 130 ). Other embodiments of the present invention include a method of manufacturing the PMOS device ( 200 ) and a MOS device ( 300 ).
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