发明名称 Semiconductor device having CMOS driver circuit
摘要 Voltages of nodes are controlled in accordance with an input signal using inverters. A voltage level of a transistor is adjusted using a transistor included in the inverter. By setting a gate voltage supplied to a gate of the transistor lower than a power supply voltage and higher than an ON-state voltage, gate leakage current of the transistor can be greatly decreased.
申请公布号 US7023247(B2) 申请公布日期 2006.04.04
申请号 US20030612364 申请日期 2003.07.03
申请人 RENESAS TECHNOLOGY CORP. 发明人 NII KOJI
分类号 H01L21/822;H03B1/00;H01L27/04;H03K17/16;H03K17/687;H03K19/00;H03K19/0175;H03K19/0948 主分类号 H01L21/822
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