| 摘要 |
A circuit is proposed for driving a memory line controlling at least one memory cell of a non-volatile memory device, the circuit being responsive to a first and a second selection signals, each one suitable to assume a first logic value or a second logic value, wherein the circuit includes a first level shifter for converting the first selection signal into a first operative signal and a second level shifter for converting the second selection signal into a second operative signal, each level shifter including first shifting means for shifting one of the logic values of the corresponding selection signal to a first bias voltage, and a selector for applying the first operative signal or a second bias voltage to the memory line according to the second operative signal; in the circuit of the invention each level shifter further includes second shifting means for shifting another of the logic values of the corresponding selection signal to the second bias voltage.
|
