Non-volatile memory and fabrication method thereof

摘要

The present invention relates to a non-volatile memory comprising: a first electrode ( 11 ); a second electrode ( 12 ); and a phase-change recording medium ( 14 ) sandwiched between the first electrode ( 11 ) and the second electrode ( 12 ), in which resistance value is varied by applying an electrical pulse across the first electrode ( 11 ) and the second electrode ( 12 ), at least one of the first electrode ( 11 ) and the second electrode ( 12 ) contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium ( 14 ) is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.