Light emitting device of III-V group compound semiconductor and fabrication method therefor

摘要

A light emitting device of III-V group compound semiconductor includes a first stack and a second stack. The first stack includes a semiconductor stack including a light emitting layer. A multilayered reflective structure for reflecting light from the light emitting layer and a first metal bonding-layer are successively formed on the semiconductor stack. The second stack includes a second metal bonding-layer. The first and second stacks are bonded together by bonding the first and second metal bonding-layers to each other. The multilayered reflective structure includes a transparent conductive oxide layer and a reflective metal layer adjacent thereto in this order from the side of the semiconductor stack. The thickness of the transparent conductive oxide layer is adjusted to control the light emission characteristics.