发明名称 |
Method for the manufacture of phase shifting masks for EUV lithography |
摘要 |
A method for fabricating an EUV phase shift mask is provided that includes a substrate upon which is deposited a thin film multilayer coating that has a complex-valued reflectance. An absorber layer or a buffer layer is attached onto the thin film multilayer, and the thickness of the thin film multilayer coating is altered to introduce a direct modulation in the complex-valued reflectance to produce phase shifting features.
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申请公布号 |
US7022435(B2) |
申请公布日期 |
2006.04.04 |
申请号 |
US20020256454 |
申请日期 |
2002.09.27 |
申请人 |
EUV LIMITED LIABILITY CORPORATION |
发明人 |
STEARNS DANIEL G.;SWEENEY DONALD W.;MIRKARIMI PAUL B.;BARTY ANTON |
分类号 |
G01F9/00;G03F1/00;G03F1/14;G03F7/20 |
主分类号 |
G01F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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