发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 <p>The gates of each pair of second transistors receive a pair of delayed timing signals whose rising and falling edges are adjacent to each other, respectively, and gradually discharge the charges at a first node pre-charged to a first power supply voltage. The discharge speed varies depending on the threshold voltage, operating temperature, and power supply voltage of the transistors. A plurality of detection circuits operates at timings different from each other to detect the voltage at the first node as logic values. A selector selects any one of the second timing signals depending on a detection result provided by the detection circuit. An internal circuit operates in synchronization with the second timing signal selected. Accordingly, the operation timing of the internal circuit can be optimally adjusted in response to a change in operating environments. This allows the improvement in operation margin of the semiconductor integrated circuit.</p>
申请公布号 KR20060028665(A) 申请公布日期 2006.03.31
申请号 KR20050007475 申请日期 2005.01.27
申请人 FUJITSU LIMITED 发明人 TOMITA HIROYOSHI
分类号 G06F1/06;G06F1/10;G11C7/04;G11C7/10;G11C11/407;G11C11/4076;H03K3/037;H03K3/356;H03K5/00;H03K5/13;H03K5/135 主分类号 G06F1/06
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