| 摘要 |
CORNER CONDUCTION IN A CONDUCTION CHANNEL (10) OF A FIELD EFFECT TRANSISTOR IS CONTROLLED BY THE GEOMETRICAL CONFIGURATION OF THE GATE OXIDE (14, 34, 140) AND SATE ELECTRODE (16, 36, 142) AT THE SIDES OF THE CONDUCTION CHANNEL. ROUNDING THE CORNERS OF THE CONDUCTION CHANNEL OR FORMING DEPRESSIONS (30, 128) AT EDGES OF TRENCH STRUCTURES SUCH AS DEEP OR SHALLOW TRENCH ISOLATION STRUCTURES (12, 26, 112) AND/OR TRENCH CAPACITORS DEVELOP RECESSES IN A SURFACE OF A SUBSTRATE (10) AT AN INTERFACE OF ACTIVE AREAS AND TRENCH STRUCTURES IN WHICH A PORTION OF THE GATE OXIDE AND GATE ELECTRODE ARE FORMED SO THAT THE GATE OXIDE AND GATE ELECTRODE EFFECTIVELY WRAP AROUND A PORTION OF THE CONDUCTION CHANNEL OF THE TRANSISTOR. PARTICULARLY WHEN SUCH TRANSISTORS ARE FORMED IN ACCORDANCE WITH SUB-MICRON DESIGN RULE, THE GEOMETRY OF THE GATE ELECTRODE ALLOWS THE ELECTRIC FIELDS IN THE CONDUCTION CHANNEL TO BE MODIFIED WITHOUT ANGLED IMPLANTATION TO REGULATE THE EFFECTS OF CORNER CONDUCTION IN THE CONDUCTION CHANNEL. THUS THE CONDUCTION CHARACTERISTIC NEAR CUT-OFF CAN BE TAILORED TO SPECIFIC APPLICATIONS AND CONDUCTION/CUT-OFF THRESHOLD VOLTAGE CAN BE REDUCED AT WILL UTILIZING A SIMPLE, EFFICIENT AND HIGH-YIELD MANUFACTURING PROCESS. (FIG. 1A)
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