| 摘要 |
PROBLEM TO BE SOLVED: To provide an improving method for incorporating nitrogen for forming a nitrogen-contained material. SOLUTION: A semiconductor working method comprises a step for providing a single substrate reaction chamber which is gas-communicated with a supply source of NH<SB>3</SB>and gas-communicated with an excited species generator, a step for providing a semiconductor substrate in the reaction chamber, a step for generating excited species in the excited species generator, a step for exposing the NH<SB>3</SB>to the excited species at upstream of the substrate and downstream of the excited species generator, and a step for exposing the substrate to the NH<SB>3</SB>and the excited species after exposing the NH<SB>3</SB>to the excited species. COPYRIGHT: (C)2006,JPO&NCIPI
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