| 摘要 |
A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungsten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienylmolybdenum dihydride, a bismethylcyclopentadienylmolybdenum dihydride, a bisethylcyclopentadienylmolybdenum dihydride, and a bisisopropylcyclopentadienylmolybdenum dihydride.
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