| 摘要 |
The present invention provides a method for etching a substrate 100 . The method includes conducting a first etch through a dielectric layer 130 located over an etch-stop layer 140 , the dielectric layer having a photoresist layer 170 located thereover and the first etch being selective to the etch-stop layer 140 . A second etch different from the first etch is conducted on the etch-stop layer 120 , the second etch including nitrogen and at least one fluorocarbon gas, such that the ratio of nitrogen to carbon in the etchant is greater than about 5:1.
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