发明名称 |
Ultratough CVD single crystal diamond and three dimensional growth thereof |
摘要 |
The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m<SUP>1/2</SUP>. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m<SUP>1/2</SUP>. The invetnion further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
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申请公布号 |
US2006065187(A1) |
申请公布日期 |
2006.03.30 |
申请号 |
US20050222224 |
申请日期 |
2005.09.09 |
申请人 |
HEMLEY RUSSELL J;MAO HO-KWANG;YAN CHIH-SHIUE |
发明人 |
HEMLEY RUSSELL J.;MAO HO-KWANG;YAN CHIH-SHIUE |
分类号 |
C30B25/00;C30B23/00;C30B28/12;C30B28/14 |
主分类号 |
C30B25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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