发明名称 Ultratough CVD single crystal diamond and three dimensional growth thereof
摘要 The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m<SUP>1/2</SUP>. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m<SUP>1/2</SUP>. The invetnion further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.
申请公布号 US2006065187(A1) 申请公布日期 2006.03.30
申请号 US20050222224 申请日期 2005.09.09
申请人 HEMLEY RUSSELL J;MAO HO-KWANG;YAN CHIH-SHIUE 发明人 HEMLEY RUSSELL J.;MAO HO-KWANG;YAN CHIH-SHIUE
分类号 C30B25/00;C30B23/00;C30B28/12;C30B28/14 主分类号 C30B25/00
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