| 摘要 |
A dual-gate thin-film transistor (DG-TFT) voltage storage circuit is provided. The circuit includes a voltage storage element, a DG-TFT having a first source/drain (S/D) connected to a data line, a top gate connected to a first gate line, a second S/D region connected to the voltage storage element, and a bottom gate connected to a bias line. In one aspect, the circuit further includes a voltage shifter having an input connected to the first gate line and an output to supply a bias voltage on the bias line. Examples of a voltage storage element include a capacitor, a liquid crystal (LC) pixel, and a light emitting diode (LED) pixel.
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