LOW THERMAL BUDGET SILICON NITRIDE FORMATION FOR ADVANCE TRANSISTOR FABRICATION

摘要

In one embodiment, a method for depositing a layer containing silicon nitride on a substrate surface is provided which includes positioning a substrate within a process chamber, heating the substrate to a predetermined temperature, and exposing the substrate surface to an alkylaminosilane compound and at least one ammonia-free reactant. In another embodiment, a method for depositing a silicon nitride layer on a substrate is provided which includes positioning a substrate within a process chamber, heating the substrate to a predetermined temperature, and exposing a substrate surface to bis(tertiarybutylamino)silane and a reagent, such as hydrogen, silane and/or disilane.