| 摘要 |
A process for structuring a resist for field effect transistor gates uses a base mask to leave unexposed regions of the resist as lines (102a,104a,106a) followed by a trimming mask (116) having transparent auxiliary structures (118,120) between the lines. A process for structuring a resist having removable exposed regions and whose unexposed regions define neighboring lines (102a,104a,106a) comprises illuminating through a base mask having transmissive regions (108,110,112,114)along either side of the lines and then through a trimmer mask (116) having a transparent auxiliary structure (118,120) between the lines and extending to their ends. |
