| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CVD apparatus for synthesizing diamond which is capable of efficiently generating plasma only in a vicinity of a substrate, preventing mixture of impurities, miniaturizing the apparatus, reducing the power consumption, and suitable for single crystal diamond necessary for manufacturing a semi-conductor device. <P>SOLUTION: A discharge chamber 10 is formed spherical, and an interior surface 11 thereof is mirror-finished. The radius of the discharge chamber 10 is set to be 3/4 of the wavelength of the introduced microwave. A substrate holder 30 is placed on a tip of a coaxial antenna 21 with a barrel portion thereof surrounded by an insulating member (quartz), and a workpiece A to be treated is further placed thereon. The substrate holder 30 or the workpiece A is located at the center of the discharge chamber 10. A bottom part of a coaxial structure 20 is completely metal-sealed by a vacuum seal part 40. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
