发明名称 SOLID-STATE IMAGING DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging device which has an electrode structure applicable to all pixel readout and can decrease a shading of incident lights in the fringe of a light receiving part. SOLUTION: The first transfer electrode 3-1, the second transfer electrode 3-2, and the third transfer electrode 3-3 of a single layer transfer electrode structure are repeatedly arrayed in a vertical direction V. The first transfer electrode 3-1 is connected in a horizontal direction H by the inter-pixel wiring 3-1a of the same layer. Sets of shunt wiring 4, 5 are formed on upper layers of the transfer electrodes 3-1, 3-2, 3-3 in the horizontal direction H and in the vertical direction V. The shunt wiring 4 for feeding a transfer pulseΦV2 to the second transfer electrode 3-2 is formed on the inter-pixel wiring 3-1a. The shunt wiring 5 for feeding a transfer pulseΦV3 to the third transfer electrode 3-3 is formed on the transfer electrode 3. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006086350(A) 申请公布日期 2006.03.30
申请号 JP20040269907 申请日期 2004.09.16
申请人 SONY CORP 发明人 KANBE HIDEO
分类号 H01L27/148;H04N5/335;H04N5/341;H04N5/369;H04N5/372;H04N101/00 主分类号 H01L27/148
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