| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain a surface light emission type laser device for high speed modulation with high reliability. SOLUTION: The surface light emission type laser device has a mesa structure 120 composed of a semiconductor lamination film formed into a convex section form. On the side of the mesa structure 120, a first insulating film 108 composed of an inorganic material is formed and on the first insulating film 108, a resin layer 109 is formed so as to fill the peripheral portion of the mesa structure 120. On the resin layer 109, a second insulating film 110 composed of an inorganic material is formed and on the second insulating film 110 and the mesa structure 120, an upper contact electrode 111 having an electrode opening 111a for exposing part of the top surface of the mesa structure 120 is formed. Due to this, oxidation and deterioration of the resin layer 109 are suppressed at the time of manufacture and the 120 can be filled without gaps, therefore, it is possible to obtain a semiconductor light emitting device with high reliability. COPYRIGHT: (C)2006,JPO&NCIPI
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