| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic detection device for reducing the fluctuations in the sensitivity between products without sacrificing sensitivity and for improving long term reliability. SOLUTION: A p-type well area 8 and an n-type collector region 6 are separately formed in a p-type element formation region 3a that is a portion of a p-type silicon layer 3 as a semiconductor layer, and an n-type emitter region 5 is formed at the surface side of the well region 8. The surface side of a base region 4, constituted of the well region 8 and a section interposed between the well region 8 and the collector region 6 in the element forming region 3a, is formed with a reconnection region 7 constituted of an n-type impurity diffusion region functioning as the reconnection center of the minority carriers in the base region 4. The surface side of the p-type silicon layer 3 is formed with an insulating film 12. The reconnection region 7 is formed at the surface side of the base region 4, by doping impurity through thermal diffusion of the impurity or the ion asymmetric implantation of the impurity and annealing, after ion implantation. COPYRIGHT: (C)2006,JPO&NCIPI
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