Mask for irradiating with electron beams in a lithographic process for producing semiconductor components has opening sections for correcting a proximity effect

摘要

Mask has opening sections for correcting a proximity effect. The opening sections are arranged so that the sizes of the sections change in the sequence of the arrangement. An independent claim is also included for a method for carrying out the irradiation with electron beams. Preferred Features: The opening sections are right angled or circular. Middle points of the opening sections are arranged in a grid pattern. The rate of change of the sections is linear and quadratic.