| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a silicon carbide crystal thin film without alternatively switching between supplies of a carbon material and a silicon material and adjustment of the supply ratio. SOLUTION: A process for forming a growth crystal surface state suited to the two-dimensional growth of crystal by irradiating with molecule electrons from a single element source of silicon (Knudsen cell 12) in order to adjust an atomic arrangement state of the growth crystal surface on the surface of a substrate 9 and a process for supplying an organic silane gas 15 including bonded molecules of carbon and silicon (Si-C molecules) as an assembling material of crystal and growing a single crystal silicon carbide thin film are comprised. As the substrate 9, a hexagonal silicon carbide substrate having a (0001) silicon termination surface or a (000-1) carbon termination surface is used. As the material of the organic silane gas 15, monomethylsilane, dimethylsilane, trimethylsilane, and tetramethylsilane can be used. COPYRIGHT: (C)2006,JPO&NCIPI
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