| 摘要 |
PROBLEM TO BE SOLVED: To provide a ridge waveguide type semiconductor laser device capable of reducing optical absorption loss, threshold current and operating current. SOLUTION: First, cladding layers 4 and 5 that sandwich an active layer 4 are formed on a substrate 2. Then, an etching stop layer 6 and ridge stripe 9 comprising a cladding layer 7a and cap layer 8a are formed on the cladding layer 5. Next, current constriction layers 101A, 102A, and 103A are formed on the ridge stripe 9 and etching stop layer 6. A photoresist pattern that exposes part of the current constriction layer 103A is formed using a photolithography method and etching method. After that, the cap layer 8 is exposed by etching the part of the current constriction layer 103A that is not covered by the photoresist pattern. Finally, a contact layer 11A is formed after the photoresist is removed and the current constriction layers and cap layer 8 are covered. COPYRIGHT: (C)2006,JPO&NCIPI
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