| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus having a structure in which, when a current fusing type fuse had been burned out, an insulating film right under the fuse is prevented from melting until reaching a substrate, and further deterioration in element characteristics is not caused. SOLUTION: The semiconductor apparatus is provided with the fuse 4 which is formed in a field region other than an active region on a semiconductor substrate 1 through the insulating film 7, and comprises a fuse body part 4a and fuse electrode parts 4b provided to both ends thereof. The film thickness of an insulating film 7a in the region under the fuse body part is made thicker than that of the insulating film in the field region other than the region under the fuse. COPYRIGHT: (C)2006,JPO&NCIPI
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