| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance memory device, capable of improving an yield, and to provide the manufacturing method of the same. SOLUTION: A TMR element 60a is constituted of a pin layer 65 composed of a magnetic film, a tunnel insulating layer 66 composed of a non-magnetic insulating film, and a free layer 67 composed of the magnetic film. The TMR element 60a is provided with a side etch structure having a cut-in formed on the side wall of the tunnel insulating layer 66 in the pin layer 65, the tunnel layer 66, and the free layer 67 having the same plane configuration respectively. COPYRIGHT: (C)2006,JPO&NCIPI
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