发明名称 ARRAY FOR SEMICONDUCTOR LASER ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser element and a semiconductor laser element array that are capable of emitting laser beams having relatively large intensity and capable of suppressing traverse higher modes. SOLUTION: The semiconductor laser element 3 comprises an n-type cladding layer 13, an active layer 15, and a p-type cladding layer 17. The p-type cladding layer 17 has a ridge 9 for forming a waveguide 4 in the active layer 15. The waveguide 4 is extended along a center axis B curved with a nearly constant curvature (radius of curvature R). In this sort of waveguide 4, loss becomes larger in the case of light having a higher order of space traverse mode in light resonating in the waveguide 4, thus maintaining laser oscillation in a traverse lower mode and suppressing laser oscillation in a traverse higher mode. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006086228(A) 申请公布日期 2006.03.30
申请号 JP20040267422 申请日期 2004.09.14
申请人 HAMAMATSU PHOTONICS KK 发明人 O YU;MIYAJIMA HIROBUMI;WATANABE AKIYOSHI;SUGA HIROBUMI
分类号 H01S5/20;H01S5/026 主分类号 H01S5/20
代理机构 代理人
主权项
地址