| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron-beam exposure method properly correcting the slippage of aμfield forming a drawing pattern and having the excellent accuracy of a drawing at a high speed. SOLUTION: The electron-beam exposure method has a means for generating a plurality of beams arrayed in a latticed shape, a means for converting the drawing pattern into the on/off-information of the beams, a means for separately turning a plurality of the beams on/off, and a means for obtaining the correcting volume of latticed shape of the corrected beams. The electron-beam exposure method further has a means for independently controlling places of the plurality of irradiated beams, and correcting the latticed shapes of the plurality of beams, a means for simultaneously deflecting the places of the plurality of irradiated beams arrayed in the latticed shape, and a means for correcting deflecting shapes in the case of simultaneous deflections. Drawing is performed while correcting the latticed shape and simultaneous deflecting shapes of the plurality of beams. COPYRIGHT: (C)2006,JPO&NCIPI
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