| 摘要 |
The present invention provides a multi-doped semiconductor e-fuse for use in an integrated circuit and a method of manufacture therefore. In one aspect, the semiconductor e-fuse 200 includes a semiconductor body 205 having a neck region 220 interposed a first portion 210 of the semiconductor body 205 and a second portion 215 of the semiconductor body 205 . The semiconductor body 205 is doped with opposite type dopants, and a conductive layer 230 is located over and extends across the neck region 220 to electrically connect the first portion 210 with the second portion 215.
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