| 发明名称 |
METHOD OF MAKING SHALLOW SEMICONDUCTOR JUNCTIONS |
| 摘要 |
Phosphorous ions 6 are implanted into a first major surface 4 of a silicon body 2 to render the first major surface amorphous. Then the silicon body is annealed at a temperature of not greater than 800°C. It has been discovered that the phosphorous 6 diffuses towards the first major surface 4 making the junction shallower. |
| 申请公布号 |
WO2006033086(A2) |
申请公布日期 |
2006.03.30 |
| 申请号 |
WO2005IB53157 |
申请日期 |
2005.09.23 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;DUFFY, RAYMOND, J. |
发明人 |
DUFFY, RAYMOND, J. |
| 分类号 |
H01L21/265;H01L21/324;H01L21/336 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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