SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can suppress the external surge voltage, and the surge voltage generated by the semiconductor element itself to prevent damage due to these surge voltages. SOLUTION: An n--layer 21 serving as an epitaxial growth layer is formed on an n+-layer 20 serving as an n+semiconductor substrate and a p guard ring 22, an n+channel stopper layer and a p+-layer 24 serving as a p anode layer are formed on the surface layer of the n--layer 21. A barrier metal 12 building a Schottky junction 26 is formed on the n--layer 21 between the p guard rings 22 and a reverse connection diode 20 made of a p poly-silicon layer 27 and an n poly-silicon layer 28 is formed between the p guard ring 22 and the p+-layer 24 via an oxide film 13. An anode electrode 11 in an SBD 1 is formed on the barrier metal 12 in a way that it contacts the p poly-silicon layer 27 of the reverse connection diode 29, and an anode electrode 11a of the pn diode 2 is formed on the p+-layer 24 in a way that it contacts the n poly-silicon layer 28 of the reverse connection diode 29. A cathode electrode 10 is formed on an n+-layer 20. COPYRIGHT: (C)2006,JPO&NCIPI