| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein it can be manufactured by simple processes cheaply, and the reduction of its drain withstanding voltage can be prevented under the atmosphere of high temperature and humidity, and further, it can be made fine, too. SOLUTION: The manufacturing method of the semiconductor device has a process for providing as first openings ion-through regions 102 in a protective film 90 formed on source electrodes 70 and a drain electrode 80, a process for so coating the protective film 90 with a sealing resin as to package the semiconductor device, and a process for so filling at this time the sealing resin into the ion-through regions 102 too as to contact directly the sealing resin with the source electrodes 70 and the drain electrode 80. Consequently, the movable ions accumulated under the atmosphere of high temperature and humidity in the interface between the protective film 90 and the sealing resin are so exhausted to the source electrodes 70 and the drain electrode 80 through the ion-through regions 102 as not to affect an n<SP>-</SP>-type extended drain region 30. Therefore, the drain withstanding voltage of the semiconductor device can be improved. COPYRIGHT: (C)2006,JPO&NCIPI
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