| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor having a structure that realizes sure and secure low-temperature operation without applying a substrate bias voltage. SOLUTION: A field-effect transistor concerning one embodiment is the field-effect transistor where it is assumed that it operates at a temperature condition of 300K or below, and comprises an n-channel field-effect transistor provided, with a gate electrode that is formed of a gate electrode material having a work function WFn smaller than 4.05. Moreover, the field-effect transistor concerning one embodiment comprises a p-channel field-effect transistor, provided with a gate electrode formed of the gate electrode material having the work function WFp larger than 5.17. COPYRIGHT: (C)2006,JPO&NCIPI
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