SEMICONDUCTOR MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the formation of the native oxide film of a wafer in a pod. SOLUTION: A batch type CVD system 1 is provided with a pod 10 comprising a wafer carry-in and carry-out port 10b of a wafer storage room 10c and a lid object 10a free of attachment and detachment; a pod property room 6 where a pod shelf 7 for keeping two or more pods 10 is furnished; a pod opener room 61 which is installed continuously with the wafer storage room 10c of the pod 10; and a wafer transfer room 12 which is installed continuously with the pod opener room 61. A gas station 80 is provided in the pod property room 6 for holding the pod 10, and filling up the wafer storage room 10c with nitrogen gas. Since the wafer storage room of an waiting pod can be filled up with nitrogen gas, it is made possible to prevent the natural oxidation of the wafer in the waiting pod, the natural oxidation at the time of the wafer storage step to the pod after standby and the diffusion of oxygen from the pod at the time of the carry-out step of the wafer from the pod after the standby. COPYRIGHT: (C)2006,JPO&NCIPI