发明名称 Layer system with a silicon layer and a passivation layer, method for production of a passivation layer on a silicon layer and use thereof
摘要 A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer. The composition of the intermediate layer transitions, either continuously or in steps, from the composition corresponding to the first partial layer into the composition corresponding to the second partial layer.
申请公布号 US2006068510(A1) 申请公布日期 2006.03.30
申请号 US20050520886 申请日期 2005.07.21
申请人 URBAN ANDREA;LAERMER FRANZ;BREITSCHWERDT KLAUS 发明人 URBAN ANDREA;LAERMER FRANZ;BREITSCHWERDT KLAUS
分类号 H01L21/00;B81C1/00;H01L21/033 主分类号 H01L21/00
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