发明名称 |
Semiconductor memory device |
摘要 |
A semiconductor memory device including a flash memory and a RAM incorporating a pseudo-SRAM contained in an MCP, has an internal transfer control signal for controlling internal data transfer between the flash memory and pseudo-SRAM, and an external transfer control signal for controlling data transfer between an external CPU and pseudo-SRAM, as control signals for the pseudo-SRAM. A flash controller in the RAM controls the internal transfer control signal so as to suspend the internal data transfer between the flash memory and pseudo-SRAM when the external CPU requests access to the pseudo-SRAM during the internal data transfer.
|
申请公布号 |
US2006065746(A1) |
申请公布日期 |
2006.03.30 |
申请号 |
US20050252584 |
申请日期 |
2005.10.19 |
申请人 |
RENESAS DEVICE DESIGN CORP. |
发明人 |
HAKUSHI NORIHIKO;OHBA ATSUSHI;YOSHIMURA YOSHIMASA;NAKAYAMA TAKESHI |
分类号 |
G06F12/00;G06K19/06;G06F12/06;G11C7/10;G11C7/22;G11C11/34;G11C11/401;G11C11/403;G11C11/406;G11C11/4096;H01L23/00 |
主分类号 |
G06F12/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|