发明名称 METHOD FOR FORMING FINE PATTERN AND RESIST COMPOSITION USED THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition giving excellent solubility to a resist coating on exposure to light particularly at 193 nm wavelength, and to provide a method for forming a fine pattern with excellent contrast by using the resist composition. <P>SOLUTION: The resist composition comprises (a) an acid dissociable functional group-containing polymer, (b) a photo-acid generating agent and (c) a dissolution inhibitor. The dissolution inhibitor (c) consists of a polymer necessarily containing a structural unit derived from at least one kind of monomer (m1) selected from fluorine-containing norbornene derivatives having a moiety expressed by formula (1). In the formula (1), Rf<SP>1</SP>and Rf<SP>2</SP>may be same or different and each represents a 1-10C fluorine-containing alkyl group which may have an ether bond; X represents F or CF<SP>3</SP>; and Y<SP>1</SP>represents an OH group or an acid dissociable functional group which is dissociated by an acid to change into an OH group. In the method for forming a fine pattern, a fine pattern is formed by using the resist composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006085081(A) 申请公布日期 2006.03.30
申请号 JP20040272451 申请日期 2004.09.17
申请人 DAIKIN IND LTD 发明人 ARAKI TAKAYUKI;ISHIKAWA TAKUJI;YOSHIDA TOMOHIRO
分类号 G03F7/039;C08F32/08;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址