发明名称 Apparatus for induced capacitor
摘要 Disclosed is an apparatus for induced capacitor, an insulating substrate; and a plurality of capacitive sensing devices, being arranged on the insulating substrate in a matrix form, each of the plurality of capacitive sensing devices further comprising: a first electrode; and a second electrode, having an inner rim and an outer rim, being disposed circumferentially surrounding the first electrode while separating the second electrode from first electrode by a distance so as to form an equivalent capacitance therebetween, wherein a potential of each capacitive sensing device formed between the two electrodes is adjusted to be a predetermined value by adjusting the distance between the inner rim of the second electrode and the circumference of the first electrode while keeping the outer rim of the second electrode fixed.
申请公布号 US2006066585(A1) 申请公布日期 2006.03.30
申请号 US20050068981 申请日期 2005.03.02
申请人 HOLTEK SEMICONDUCTOR INC. 发明人 LIN YI-CHAN
分类号 G09G5/00 主分类号 G09G5/00
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