| 摘要 |
<p>A CCD solid-state image pickup device consisting of a Photodiode region, a VCCD region, and an HCCD region is disclosed. The photodiode region is formed with a first p-well on an N-type semiconductor substrate, an N-type impurity layer on the first p-well to accumulate electrons in the the photodiode region, and a P-type impurity layer on the N-type impurity layer to prevent the electrons generated on the surface of the photodiode region from being induced into the photodiode region. The VCCD region is formed with the first p-well on the N-type semiconductor substrate, a second P-well on the first P-well, and a BCCD on the second P-well to accumulate the electrons therein depending on a voltage of a gate electrode. The HCCD region is formed with a well comprising the first p-well and a third P-well on the N-type semiconductor substrate, a BCCD region on the second P-well, and at least one P-type impurity layer barrier on a part of the surface of the BCCD. The CCD solid-state image pickup device solves a problem of a saturation voltage in the VCCD region, and enhances a CTE characteristic of the HCCD region by an ion implantation with optimal amounts of energy and doses in a high-pixel honeycomb structure.</p> |
