| 摘要 |
PROBLEM TO BE SOLVED: To provide a method to form a 45-degree surface of a semiconductor substrate having excellent surface smoothness to be used as a reflecting surface for optical source. SOLUTION: The method to form a crystallographically equivalent surface to the ä110} surface or ä100} surface of a semiconductor substrate include the following steps. First, a semiconductor substrate having a top surface crystallographically equivalent to the ä110} surface or ä100} surface is prepared. Then, an etching mask with an etching window is formed on the surface crystallographically equivalent to the ä110} surface or ä100} surface. The etching window has a sidewall having a certain degree of a tilt angle with a direction crystallographically equivalent to the <100> direction or <110> direction of the semiconductor substrate. The tilt angle is greater than 0 degree and smaller than 90 degrees, and not equal to 45 degrees. After that, selective anisotropic etching treatment is performed using the etching window, thereby forming the equivalent surface to the ä110} surface or ä100} surface on the semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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